PART |
Description |
Maker |
K4H560838E K4H560838E-TC_LB3 K4H560438E-TC_LA2 K4H |
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4H560838J |
256Mb J-die DDR SDRAM Specification
|
Samsung semiconductor
|
K4H560838H |
(K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
|
Samsung semiconductor
|
HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT- |
DDR SDRAM - 256Mb 256M-P DDR SDRAM IC,SDRAM,DDR,4X8MX8,CMOS,TSSOP,66PIN,PLASTIC
|
Hynix Semiconductor http://
|
NT256D64S88A0G NT256D64S88A0G-7K NT256D64S88A0G-75 |
256Mb: 32Mx64 unbuffered DDR SDRAM module based 32x8 SDRAM 184pin One Bank Unbuffered DDR SDRAM MODULE 一位银行无缓冲184pin DDR SDRAM内存模块
|
NANYA ETC Electronic Theatre Controls, Inc.
|
K4H560838E-GCCC K4H560838E-GCC4 |
256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
|
Samsung semiconductor
|
HYMD132G725B8M-H HYMD132G725B8M-K HYMD132G725B8M-L |
DDR SDRAM - Registered DIMM 256MB SDRAM|DDR|32MX72|CMOS|DIMM|184PIN|PLASTIC Low Profile Registered DDR SDRAM DIMM
|
Hynix Semiconductor
|
HYS72D128521GR-7-B HYS72D64500GR-8-B HYS72D128520G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank DDR SDRAM Modules - 1GB (128Mx72) PC2100 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank 256 MB 32M x 72 PC2100 Registered DIM... DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-2-2 2-bank Registered DDR SDRAM-Modules Low Profile Registered DDR-I SDRAM-Modules
|
INFINEON[Infineon Technologies AG]
|
EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM 300MHz 2.8V 4M x 32 DDR SDRAM 333MHz 2.8V 4M x 32 DDR SDRAM 350MHz 2.8V 4M x 32 DDR SDRAM 4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.] Etron Technology Inc. ETRON[Etron Technology Inc.]
|
HYMD232726CL8-H HYMD232726CL8-K HYMD232726CL8-L HY |
DDR SDRAM - Unbuffered DIMM 256MB 32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 Unbuffered DDR SDRAM DIMM
|
HYNIX SEMICONDUCTOR INC
|